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PIMN31,115 NPN / PNP Resistor Equipped Transistor 500 MA 50V Dual Gate Transistor

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ChongMing Group (HK) Int'l Co., Ltd

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Model Number : PIMN31

Place of Origin : Malaysia

MOQ : 3000 PCS

Price : Negotiation

Payment Terms : T/T, Western Union ， ESCROW

Supply Ability : 30000PCS

Delivery Time : STOCK

Packaging Details : 3000PCS/REEL

Description : Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 500mA 420mW Surface Mount 6-TSOP

Categories : Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Current - Collector (Ic) (Max) : 500mA

Voltage - Collector Emitter Breakdown (Max) : 50V

Resistor - Base (R1) : 1 kOhms

Resistor - Emitter Base (R2) : 10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 50mA, 5V

Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA

Current - Collector Cutoff (Max) : 500nA

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HGTG11N120CND NPT Series N Channel IGBT Anti-Parallel Hyperfast Diode 43A 1200V

Description :

The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design.

This is a new member of the MOS gated high voltage switching IGBT family.

IGBTs combine the best features of MOSFETs and bipolar transistors.

This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

The IGBT used is the development type TA49291.

The Diode used is the development type TA49189.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies

where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids,

relays and contactors. Formerly Developmental Type TA49303.

Features :

• 43A, 1200V, TC = 25oC

• 1200V Switching SOA Capability

• Typical Fall Time. . . . . .340ns at TJ = 150oC

• Short Circuit Rating

• Low Conduction Loss

• Thermal Impedance SPICE Model

Product Tags:

resistor equipped transistor

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