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FQPF10N20C high power mosfet transistors power mosfet ic Power Mosfet Transistor 200V N-Channel MOSFET

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FQPF10N20C high power mosfet transistors power mosfet ic Power Mosfet Transistor 200V N-Channel MOSFET

Model Number : FQPF10N20C

Certification : new & original

Place of Origin : original factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 7800pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Description : N-Channel 200 V 9.5A (Tc) 38W (Tc) Through Hole TO-220F-3

Drain-Source Voltage : 200 V

Gate-Source Voltage : ± 30 V

Single Pulsed Avalanche Energy : 210 mJ

Avalanche Current : 9.5 A

Repetitive Avalanche Energy : 7.2 mJ

Operating and Storage Temperature Range : -55 to +150 °C

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FQP10N20C/FQPF10N20C
200V N-Channel MOSFET

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.

Features
• 9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V
• Low gate charge ( typical 20 nC)
• Low Crss ( typical 40.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

Absolute Maximum Ratings T_C = 25°C unless otherwise noted

Symbol	Parameter	FQP10N20C	FQPF10N20C	Units
V_DSS	Drain-Source Voltage	200		V
I_D	Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C)	9.5	9.5 *	A
I_D		6.0	6.0 *	A
I_DM	Drain Current - Pulsed (Note 1)	38	38 *	A
V_GSS	Gate-Source Voltage	± 30		V
E_AS	Single Pulsed Avalanche Energy (Note 2)	210		mJ
I_AR	Avalanche Current (Note 1)	9.5		A
E_AR	Repetitive Avalanche Energy (Note 1)	7.2		mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	5.5		V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	72	38	W
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C	0.57	0.3	W/°C
T_J, T_STG	Operating and Storage Temperature Range	-55 to +150		°C
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300		°C

* Drain current limited by maximum junction temperature.

Package Dimensions

TO-220

TO-220F

Stock Offer (Hot Sell)

Part NO.

Q'ty

MFG

D/C

Package

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Product Tags:

multi emitter transistor

silicon power transistors

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