TLC272CDR Integrated Circuit Chip , Lincmos Precision Dual Operational Amplifier Ic Chip

TLC272CDR Integrated Circuit Chip , Lincmos Precision Dual Operational Amplifier Ic Chip

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Trimmed Offset Voltage:

TLC277 . . . 500 µV Max at 25°C, VDD = 5 V

►Input Offset Voltage Drift ...

Typically 0.1 µV/Month, Including the First 30 Days

►Wide Range of Supply Voltages Over Specified Temperature Range:

0°C to 70°C . . . 3 V to 16 V

–40°C to 85°C . . . 4 V to 16 V

–55°C to 125°C . . . 4 V to 16 V

►Single-Supply Operation

►Common-Mode Input Voltage Range Extends Below the Negative Rail (C-Suffix, I-Suffix types)

► Low Noise ...Typically 25 nV/√Hz at f = 1 kHz

►Output Voltage Range Includes Negative Rail

► High Input impedance . . . 1012 Ω Typ

►ESD-Protection Circuitry

►Small-Outline Package Option Also Available in Tape and Reel

►Designed-In Latch-Up Immunity

description

The TLC272 and TLC277 precision dual operational amplifiers combine a wide range of input offset voltage grades with low offset voltage drift, high input impedance, low noise, and speeds approaching those of general-purpose BiFET devices.

These devices use Texas Instruments silicongate LinCMOS technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes.

The extremely high input impedance, low bias currents, and high slew rates make these costeffective devices ideal for applications previously reserved for BiFET and NFET products. Four offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC272 (10 mV) to the high-precision TLC277 (500 µV). These advantages, in combination with good common-mode rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs.

equivalent schematic (each amplifier)

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TLC272CDR Integrated Circuit Chip , Lincmos Precision Dual Operational Amplifier Ic Chip Images